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| IPA60R385CP CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ON x QG * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.385 17 nC PG-TO220-3-31 CoolMOS is specially designed for: * Hard switching SMPS topologies Type IPA60R385CP Package PG-TO220-3-31 Ordering Code SP000089316 Marking 6R385P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3)4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 1.5 P tot T j, T stg M2.5 screws page 1 T C=25 C T C=25 C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V Value 9.0 5.7 27 227 0.3 3 50 20 30 31 -55 ... 150 50 W C Ncm 2006-01-04 A V/ns V mJ Unit A IPA60R385CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Reverse diode dv /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 5.2 27 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 4 80 K/W T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=V GS, I D=0.34 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=5.2 A, T j=25 C V GS=10 V, I D=5.2 A, T j=150 C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 V Zero gate voltage drain current - 10 0.35 0.94 1.8 1 100 0.385 - A nA Rev. 1.5 page 2 2006-01-04 IPA60R385CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related6) Effective output capacitance, time related7) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=100 V, f =1 MHz - 790 38 36 96 10 5 40 5 - pF V GS=0 V, V DS=0 V to 480 V ns V DD=400 V, V GS=10 V, I D=12 A, R G=3.3 - Q gs Q gd Qg V plateau V DD=400 V, I D=5.2 A, V GS=0 to 10 V - 4 6 17 5.0 22 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=5.2 A, T j=25 C - 0.9 260 3.1 24 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Limited only by maximum temperature Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD<=ID, di/dt<=400A/s, VDClink=400V, Vpeak 3) 4) 5) 6) 7) Rev. 1.5 page 3 2006-01-04 IPA60R385CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 35 102 limited by on-state resistance 30 1 s 25 101 10 s P tot [W] 20 100 s I D [A] 15 1 ms 10 100 DC 10 ms 5 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z thJC=f(t P) parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 25 20 V 10 V 0.5 20 7V 8V 100 0.2 6V Z thJC [K/W] 0.1 0.05 0.02 15 I D [A] 5.5 V 10 10-1 0.01 5V single pulse 5 4.5 V 10-2 10 -5 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0 5 10 15 20 t p [s] V DS [V] Rev. 1.5 page 4 2006-01-04 IPA60R385CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 16 8V 7V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 1.6 14 20 V 10 V 6V 1.4 5V 5.5 V 6V 6.5 V 7V 20 V 12 1.2 5.5 V 10 1 R DS(on) [] I D [A] 8 5V 0.8 6 4.5 V 0.6 4 0.4 2 0.2 0 0 5 10 15 20 0 0 5 10 15 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=5.2 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1.2 40 36 C 25 1 32 28 24 0.8 R DS(on) [] 0.6 98 % I D [A] 20 16 C 150 0.4 typ 12 8 4 0.2 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 1.5 page 5 2006-01-04 IPA60R385CP 9 Typ. gate charge V GS=f(Q gate); I D=5.2 A pulsed parameter: V DD 10 9 8 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 7 6 400 V 101 150 C 25 C 150 C, 98% V GS [V] 5 4 3 2 1 0 0 5 10 15 20 I F [A] 100 25 C, 98% 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=3.4 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 250 700 200 660 V( BR)DSS [V] 20 60 100 140 180 150 E AS [mJ] 620 100 580 50 0 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 1.5 page 6 2006-01-04 IPA60R385CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 104 6 5 103 Ciss 4 102 Coss E oss [J] 200 300 400 500 C [pF] 3 2 101 1 Crss 100 0 100 0 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 1.5 page 7 2006-01-04 IPA60R385CP Definition of diode switching characteristics Rev. 1.5 page 8 2006-01-04 IPA60R385CP PG-TO220-3-31: Outline/ Fully isolated package (2500VAC; 1 minute) Dimensions in mm/inches Dimensions in mm/inches: Rev. 1.5 page 9 2006-01-04 IPA60R385CP Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.5 page 10 2006-01-04 |
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